| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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14,750 pcs
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14750 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Technology |
The A3T18H408W24SR3 is an AIRFAST RF power LDMOS transistor from NXP Semiconductors, designed for cellular base station applications requiring very wide instantaneous bandwidth. It operates over the frequency range of 1805 to 1880 MHz and is configured as an asymmetrical Doherty amplifier for high efficiency.
Key electrical specifications include a typical output power of 56W average (CW, 1840 MHz, VDD=30V), typical drain efficiency of 50.9% (W-CDMA, 1840 MHz, 56W Avg.), and typical gain of 15.4 dB. The device operates at 30V nominal and features a maximum drain-source voltage rating of 65V and gate-source voltage rating of ±10V.
The transistor is housed in a NI-780S-4L2L surface mount package with 6 pins. It supports a case operating temperature range of -40 to 150°C and storage temperature range of -65 to 150°C. The device is RoHS3 compliant, REACH unaffected, and has MSL 1 unlimited.
Designed for digital predistortion error correction systems, the A3T18H408W24SR3 can withstand extremely high output VSWR and broadband operating conditions. It is suitable for use in Doherty amplifier designs for cellular infrastructure.
The nominal operating voltage is 30 Vdc.
The device is packaged in a NI-780S-4L2L surface mount package with 6 pins.
The case operating temperature range is -40 to 150°C, storage temperature range is -65 to 150°C, and junction temperature range is -40 to 225°C.
Yes, the device is RoHS3 compliant (low confidence, unverified).
The typical average output power is 56W under CW test conditions at 1840 MHz and 30V.
The device operates from 1805 to 1880 MHz.
The typical drain efficiency is 50.9% under W-CDMA test conditions at 1840 MHz and 56W average output power.