A3T18H408W24SR3 AIRFAST RF power LDMOS transistor designed for cellular base station applications requiring wide instantaneous bandwidth from 1805 to 1880 MHz. Delivers 56W average output power with 50.9% typical drain efficiency.
Mfr Part #:

A3T18H408W24SR3

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
AIRFAST RF power LDMOS transistor designed for cellular base station applications requiring wide instantaneous bandwidth from 1805 to 1880 MHz. Delivers 56W average output power with 50.9% typical drain efficiency.
✓ Total Stock: 14,750 pcs

A3T18H408W24SR3 Available from 1 distributor

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A3T18H408W24SR3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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A3T18H408W24SR3 Description

Short technical summary and product information.

The A3T18H408W24SR3 is an AIRFAST RF power LDMOS transistor from NXP Semiconductors, designed for cellular base station applications requiring very wide instantaneous bandwidth. It operates over the frequency range of 1805 to 1880 MHz and is configured as an asymmetrical Doherty amplifier for high efficiency.

 

Key electrical specifications include a typical output power of 56W average (CW, 1840 MHz, VDD=30V), typical drain efficiency of 50.9% (W-CDMA, 1840 MHz, 56W Avg.), and typical gain of 15.4 dB. The device operates at 30V nominal and features a maximum drain-source voltage rating of 65V and gate-source voltage rating of ±10V.

 

The transistor is housed in a NI-780S-4L2L surface mount package with 6 pins. It supports a case operating temperature range of -40 to 150°C and storage temperature range of -65 to 150°C. The device is RoHS3 compliant, REACH unaffected, and has MSL 1 unlimited.

 

Designed for digital predistortion error correction systems, the A3T18H408W24SR3 can withstand extremely high output VSWR and broadband operating conditions. It is suitable for use in Doherty amplifier designs for cellular infrastructure.

A3T18H408W24SR3 Quick Information

Product Type: RF Power LDMOS Transistor
Series: Airfast
Canonical Name: A3T18H408W24SR3 RF Power LDMOS Transistor
Subcategory: RF Power Transistors

A3T18H408W24SR3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

A3T18H408W24SR3 Features

  • 56W average output power at 30V operation.
  • 1805-1880 MHz frequency range with wide bandwidth.
  • Asymmetrical Doherty configuration for high efficiency.
  • 50.9% typical drain efficiency under W-CDMA.
  • RoHS3 compliant and MSL 1 unlimited.

A3T18H408W24SR3 Applications

  • Cellular base station power amplifiers.
  • Doherty amplifier designs requiring high efficiency.
  • Wide instantaneous bandwidth RF applications.
  • Digital predistortion error correction systems.

A3T18H408W24SR3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the A3T18H408W24SR3?

The nominal operating voltage is 30 Vdc.

What is the package type of the A3T18H408W24SR3?

The device is packaged in a NI-780S-4L2L surface mount package with 6 pins.

What is the operating temperature range of the A3T18H408W24SR3?

The case operating temperature range is -40 to 150°C, storage temperature range is -65 to 150°C, and junction temperature range is -40 to 225°C.

Is the A3T18H408W24SR3 RoHS compliant?

Yes, the device is RoHS3 compliant (low confidence, unverified).

What is the output power of the A3T18H408W24SR3?

The typical average output power is 56W under CW test conditions at 1840 MHz and 30V.

What is the frequency range of the A3T18H408W24SR3?

The device operates from 1805 to 1880 MHz.

What is the drain efficiency of the A3T18H408W24SR3?

The typical drain efficiency is 50.9% under W-CDMA test conditions at 1840 MHz and 56W average output power.

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