| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,550 pcs
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2550 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The A3T18H360W23SR6 is a 63-watt RF power LDMOS transistor from NXP Semiconductors, designed for cellular base station applications requiring wide instantaneous bandwidth. It operates over the frequency range of 1805 to 1880 MHz with a nominal 28V drain supply voltage.
This device uses an advanced high-performance in-package Doherty configuration to achieve high efficiency and linearity. Typical performance at 1840 MHz with a W-CDMA signal includes a power gain of 16.6 dB, drain efficiency of 52.3%, and an output PAR of 7.6 dB. The transistor is designed to withstand extremely high output VSWR and broadband operating conditions.
The A3T18H360W23SR6 is housed in an ACP-1230S-4L2S package and is chassis mountable. It features a maximum drain-source voltage of 65V and an operating junction temperature range of -40 to +225 °C. The device is suitable for digital predistortion error correction systems.
The nominal operating voltage (VDD) is 28V, with a maximum operating voltage of 32V.
It uses an ACP-1230S-4L2S package with chassis mount mounting type.
The case operating temperature range is -40 to +150 °C, and the operating junction temperature range is -40 to +225 °C.
The part is listed as RoHS3 Compliant, though this information is unverified.
The typical power gain is 16.6 dB at 1840 MHz with a 63W W-CDMA signal and 28V supply.
The maximum drain-source voltage (VDSS) is 65V.