| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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125 pcs
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125 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The A3M37TL039T2 from NXP Semiconductors is a single-channel RF amplifier for 5G and LTE applications. It operates across the 3.6 GHz to 3.8 GHz frequency band and provides a typical gain of 27.1 dB. The device is built on silicon (Si) technology and requires a single DC supply; typical operating supply voltage is 28 V, with a minimum of 24 V and a maximum of 30 V.
This surface-mount amplifier is supplied in a 26-lead LQFN package with an exposed pad (26-HLQFN, 10 mm x 6 mm x 1.44 mm max). The package supports standard tape-and-reel assembly for high-volume manufacturing. The exposed pad assists with thermal management, which is important for continuous RF operation.
With its 5G and LTE classification, the A3M37TL039T2 is suitable for RF amplification in the 3.6-3.8 GHz band. The single-channel configuration and silicon technology suit compact designs. The device operates at temperatures up to +125 °C, allowing use in thermally demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The A3M37TL039T2 operates from a single supply voltage from 24 V to 30 V, with a typical value of 28 V.
The A3M37TL039T2 is supplied in a 26-LQFN exposed pad package (26-HLQFN, 10 mm x 6 mm x 1.44 mm max) with surface-mount mounting and tape-and-reel packaging.
The A3M37TL039T2 has a maximum operating temperature of +125 °C.
The A3M37TL039T2 operates from 3.6 GHz to 3.8 GHz.
The A3M37TL039T2 provides a typical gain of 27.1 dB.
The A3M37TL039T2 is intended for 5G and LTE RF applications.
The A3M37TL039T2 uses silicon (Si) technology.