| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,500 pcs
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2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
19 pcs
|
19 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors A3I35D025WNR1 is a wideband integrated power amplifier designed for cellular base station applications requiring very wide instantaneous bandwidth capability. This RF LDMOS device operates from 3200 to 4000 MHz and is rated for 20 to 32 V operation, covering typical cellular base station modulation formats.
Key electrical specifications include a typical power gain of 30.5 dB and a P1dB compression point of 42.6 dBm. The amplifier features on-chip matching for a 50-ohm input and is designed for digital predistortion error correction systems, making it optimized for Doherty applications.
This component is housed in a TO-270WB-17 plastic package with flat leads, suitable for surface mounting. It operates within a temperature range of -40°C to +150°C and has a moisture sensitivity level of 1.
With its wide instantaneous bandwidth and optimized design for Doherty applications, the A3I35D025WNR1 is well-suited for advanced cellular infrastructure.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating frequency range is 3.2 GHz to 4 GHz.
The typical power gain is 30.5 dB.
The P1dB compression point is 42.6 dBm.
The operating supply voltage range is 20 V to 32 V.
It is in a TO-270WB-17 package with flat leads, suitable for surface mounting.
The minimum operating temperature is -40 °C and the maximum is +150 °C.