| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,250 pcs
|
6250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,250 pcs
|
6250 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
201 pcs
|
201 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Frequency | |
| Mounting Type | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Transistor Type | |
| Voltage |
The A3G35H100-04SR3 is a 14W RF power GaN transistor designed for cellular base station applications requiring wide instantaneous bandwidth. It operates across the 3400 to 3600 MHz frequency range with a 48V drain supply voltage. The device features a dual N-channel configuration and is housed in an NI-780S-4L surface mount package.
Typical performance at 14W average output power includes 14 dB power gain, drain efficiency between 41.4% and 43.8%, and output PAR of 9.6-9.7 dB across the band. The transistor is characterized for use in asymmetrical Doherty amplifier designs and supports high terminal impedances for broadband operation.
The device has a maximum drain-source voltage of 125V and a gate-source voltage range of -8V to 0V. It operates over a junction temperature range of -55°C to 225°C and offers thermal resistance of 2.3°C/W (IR) and 3.88°C/W (FEA).
| Qty | Low | High |
|---|---|---|
| 3+ | $105.89 | $105.89 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain supply voltage is 48V (VDD=48V). The maximum drain-source voltage is 125V.
3400 to 3600 MHz.
14W average output power.
NI-780S-4L surface mount package.
Operating junction temperature range is -55°C to 225°C.
Typical power gain is 14 dB at 3400, 3500, and 3600 MHz.
RoHS3 compliant (unverified).