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A3G18H500-04SR3 The NXP A3G18H500-04SR3 is a 107W GaN RF power transistor designed for cellular base station applications. It operates from 1.805 to 1.88 GHz with a 48V drain supply.
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A3G18H500-04SR3

Available from 2 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The NXP A3G18H500-04SR3 is a 107W GaN RF power transistor designed for cellular base station applications. It operates from 1.805 to 1.88 GHz with a 48V drain supply.
✓ Total Stock: 60,250 pcs

A3G18H500-04SR3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
60,000 pcs
On Request
60000 pcs On Request 1 On Request On Request On Request On Request On Request
Flip Electronics ✓
Non-Authorised Inventory information
250 pcs
On Request
250 pcs On Request 1 On Request On Request On Request On Request On Request
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A3G18H500-04SR3 Specifications Quick View

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A3G18H500-04SR3 Description

Short technical summary and product information.

The NXP A3G18H500-04SR3 is an asymmetrical Doherty RF power GaN transistor designed for cellular base station applications requiring wide instantaneous bandwidth. It covers the frequency range of 1.805 to 1.88 GHz and delivers 107W average output power.

 

Key electrical specifications include a typical gain of 15.4 dB, a drain-source breakdown voltage of 150V minimum, and a gate threshold voltage range of -3.8V to -2.3V. The device is characterized for operation with a 48V drain supply and a quiescent drain current of 200 mA.

 

The transistor is housed in a surface mount NI-780S-4L package and features a dual configuration. It has a case operating temperature range of -55°C to +150°C and a maximum junction temperature of 275°C.

A3G18H500-04SR3 Quick Information

Product Type: RF Power GaN Transistor
Canonical Name: NXP A3G18H500-04SR3 RF Power GaN Transistor
Subcategory: RF MOSFETs

A3G18H500-04SR3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

A3G18H500-04SR3 Features

  • 107W average output power GaN transistor.
  • Operates from 1.805 to 1.88 GHz frequency.
  • 15.4 dB typical gain at 48V supply.
  • Surface mount NI-780S-4L package.
  • Dual asymmetrical Doherty configuration.

A3G18H500-04SR3 Applications

  • Ideal for cellular base station power amplifiers.
  • Suitable for wide instantaneous bandwidth applications.
  • Used in 48V RF power amplifier designs.

A3G18H500-04SR3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the operating voltage range of the A3G18H500-04SR3?

The operating voltage range is 0V to 55V.

What is the package type for the A3G18H500-04SR3?

The package is NI-780S-4L, a surface mount package.

What is the operating temperature range for the A3G18H500-04SR3?

The case operating temperature range is -55°C to +150°C.

What is the output power of the A3G18H500-04SR3?

The nominal output power is 107W.

What is the frequency range of the A3G18H500-04SR3?

The frequency range is 1.805 GHz to 1.88 GHz.

What is the typical gain of the A3G18H500-04SR3?

The typical gain is 15.4 dB at 48V, 200mA quiescent current.

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