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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The A2V09H525-04NR6 is an RF power LDMOS transistor from NXP Semiconductors, designed for cellular base station applications. This N-channel enhancement-mode lateral MOSFET operates over the frequency range of 720 to 960 MHz and delivers 120 W average output power. It is intended for use in Doherty amplifier configurations, supporting high efficiency and linearity for W-CDMA and other modulation schemes.
The device operates with a typical supply voltage of 48 V and features a typical gain of 18.9 dB at 940 MHz and 18.1 dB at 780 MHz, with drain efficiencies of 56.7% and 54.7% respectively. The transistor is packaged in a surface-mount OM-1230-4L package. It has a maximum drain-source voltage of 105 V and a gate-source voltage range of -6 V to +10 V. The thermal resistance from junction to case is 0.23 °C/W, and the operating junction temperature range is -40°C to 225°C.
This component is suitable for high-power RF amplification in base stations, especially where Doherty architecture is required for efficiency. The package's exposed backside is the source terminal, simplifying thermal and electrical connection.
| Qty | Low | High |
|---|---|---|
| 150+ | $182.70 | $182.70 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical operating voltage is 48 V.
The device is in a surface-mount OM-1230-4L package.
The case operating temperature range is -40°C to 150°C, and the junction temperature range is -40°C to 225°C.
It is listed as RoHS3 compliant, but this status is unverified.
The frequency range is 720 to 960 MHz.
The average output power is 120 W.
Typical gain is 18.9 dB at 940 MHz and 18.1 dB at 780 MHz.