A2V09H400-04SR3 The A2V09H400-04SR3 is a 102W average RF power LDMOS transistor from NXP Semiconductors, designed for cellular base station applications from 720 to 960 MHz. It features an asymmetrical Doherty configuration in a surface mount NI-780S-4L package.
Mfr Part #:

A2V09H400-04SR3

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The A2V09H400-04SR3 is a 102W average RF power LDMOS transistor from NXP Semiconductors, designed for cellular base station applications from 720 to 960 MHz. It features an asymmetrical Doherty configuration in a surface mount NI-780S-4L package.
✓ Total Stock: 8,000 pcs

A2V09H400-04SR3 Available from 1 distributor

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A2V09H400-04SR3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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A2V09H400-04SR3 Description

Short technical summary and product information.

The A2V09H400-04SR3 is an N-channel enhancement-mode lateral MOSFET RF power transistor from NXP Semiconductors' AIRFAST family. It is designed for cellular base station applications covering the frequency range of 720 to 960 MHz. This device utilizes LDMOS technology and features an asymmetrical Doherty configuration for high efficiency.

 

Key electrical characteristics include a typical output power of 102 W average at 48 V supply (with IDQA=750 mA, VGSB=0.8 V) and a typical gain of 18.7 dB at 920 MHz. At 46 V supply, it delivers 81 W average with gain up to 18.8 dB. The transistor supports digital predistortion error correction systems and offers a wide gate-source voltage range for improved Class C operation.

 

The device is housed in a surface mount NI-780S-4L package with a junction-to-case thermal resistance of 0.51 °C/W. It operates over a case temperature range of -40 to +150 °C and a junction temperature range of -40 to +225 °C. ESD protection is rated Class 2 (HBM) and Class C3 (CDM).

A2V09H400-04SR3 Quick Information

Product Type: RF Power LDMOS Transistor
Series: Airfast
Canonical Name: A2V09H400-04SR3 RF Power LDMOS Transistor
Subcategory: Doherty Transistor

A2V09H400-04SR3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

A2V09H400-04SR3 Features

  • 102W average output power at 48V supply.
  • Frequency range 720 to 960 MHz.
  • Asymmetrical Doherty LDMOS configuration.
  • Surface mount NI-780S-4L package.
  • Designed for digital predistortion systems.

A2V09H400-04SR3 Applications

  • Cellular base station power amplifiers.
  • Multi-carrier W-CDMA and LTE systems.
  • RF energy and industrial applications.

A2V09H400-04SR3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the A2V09H400-04SR3?

The typical supply voltage is 48 V, with a maximum of 55 V.

What package does the A2V09H400-04SR3 come in?

It is available in a surface mount NI-780S-4L package.

What is the operating temperature range?

The case operating temperature range is -40 to +150 °C, and the junction temperature range is -40 to +225 °C.

Is the A2V09H400-04SR3 RoHS compliant?

RoHS3 compliant status is unverified but indicated as compliant.

What frequency range does the A2V09H400-04SR3 support?

It covers 720 to 960 MHz.

What is the output power of this transistor?

Typical average output power is 102 W at 48 V supply and 81 W at 46 V supply.

What is the typical gain?

Typical gain is 18.7 dB at 920 MHz, 18.9 dB at 940 MHz, and 18.5 dB at 960 MHz.

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