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8,000 pcs
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8000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The A2V09H400-04SR3 is an N-channel enhancement-mode lateral MOSFET RF power transistor from NXP Semiconductors' AIRFAST family. It is designed for cellular base station applications covering the frequency range of 720 to 960 MHz. This device utilizes LDMOS technology and features an asymmetrical Doherty configuration for high efficiency.
Key electrical characteristics include a typical output power of 102 W average at 48 V supply (with IDQA=750 mA, VGSB=0.8 V) and a typical gain of 18.7 dB at 920 MHz. At 46 V supply, it delivers 81 W average with gain up to 18.8 dB. The transistor supports digital predistortion error correction systems and offers a wide gate-source voltage range for improved Class C operation.
The device is housed in a surface mount NI-780S-4L package with a junction-to-case thermal resistance of 0.51 °C/W. It operates over a case temperature range of -40 to +150 °C and a junction temperature range of -40 to +225 °C. ESD protection is rated Class 2 (HBM) and Class C3 (CDM).
The typical supply voltage is 48 V, with a maximum of 55 V.
It is available in a surface mount NI-780S-4L package.
The case operating temperature range is -40 to +150 °C, and the junction temperature range is -40 to +225 °C.
RoHS3 compliant status is unverified but indicated as compliant.
It covers 720 to 960 MHz.
Typical average output power is 102 W at 48 V supply and 81 W at 46 V supply.
Typical gain is 18.7 dB at 920 MHz, 18.9 dB at 940 MHz, and 18.5 dB at 960 MHz.