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250 pcs
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250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The A2V09H400-04NR3 is an RF power LDMOS transistor from NXP Semiconductors, part of the AIRFAST family. It is designed for cellular base station applications covering 720 to 960 MHz. This device is an asymmetrical Doherty configuration with two N-channel LDMOS transistors in a single package.
Key specifications include typical gain of 17.9dB (18.0dB at 780 MHz), drain efficiency of 55.8% at 780 MHz, and output power of 107W average. Operating voltage is 48V, with maximum drain-source voltage of 105V and gate-source voltage range of -6 to +10V. Quiescent current is 688 mA.
Thermal characteristics: junction-to-case thermal resistance 0.50°C/W, operating junction temperature range -40 to +225°C, case operating temperature range -40 to +150°C. The device is housed in a surface mount OM-780-4L package with exposed backside source terminal. Moisture sensitivity level is MSL 3.
Applications include digital predistortion error correction systems, W-CDMA and multi-carrier base station power amplifiers.
| Qty | Low | High |
|---|---|---|
| 2+ | $148.44 | $148.44 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The nominal operating voltage is 48 Vdc.
It comes in an OM-780-4L surface mount package.
Case operating temperature range is -40 to +150°C, and junction temperature range is -40 to +225°C.
Yes, it is listed as RoHS3 compliant, though this is unverified.
It covers 720 MHz to 960 MHz.
Typical gain is 17.9 dB, with 18.0 dB at 780 MHz under test conditions.
The nominal output power is 107W average.