| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| AEC Qualified | |
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| Automotive Grade | |
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| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
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| Tape & Reel | |
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| Voltage |
The A2V09H300-04NR3 is an AIRFAST RF Power LDMOS transistor from NXP Semiconductors, designed for cellular base station applications covering the frequency range of 720 to 960 MHz. This asymmetrical Doherty transistor delivers 79 W average power with a typical gain of 19.7 dB at 940 MHz.
This device operates at a nominal voltage of 48 V and features a quiescent current of 400 mA. It is housed in a surface-mount OM-780G-4L plastic package. The transistor supports a drain-source voltage up to 105 V and a gate-source voltage range of -6V to +10V.
The A2V09H300-04NR3 is designed for digital predistortion error correction systems and offers a case operating temperature range of -40°C to +150°C. It is RoHS3 compliant and has a moisture sensitivity level of 3.
| Qty | Low | High |
|---|---|---|
| 250+ | $161.00 | $161.00 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The nominal operating voltage (VDD) is 48 V.
The device is housed in an OM-780G-4L surface-mount plastic package.
The case operating temperature range is -40°C to +150°C.
Yes, the device is RoHS3 Compliant.
The frequency range is 720 MHz to 960 MHz.
The typical gain is 19.7 dB at 940 MHz.
The MSL is Level 3 with a peak temperature of 260°C.