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150 pcs
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150 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The A2V07H525-04NR6 is an NXP AIRFAST RF power LDMOS transistor designed for cellular base station power amplifier applications. It is an asymmetrical Doherty device operating over the 595 MHz to 851 MHz frequency range.
The transistor delivers 120W average output power under W-CDMA test conditions with 9.9 dB PAR. It operates from a nominal 48V drain-source supply and provides typical gain from 17.3 dB to 18.4 dB depending on frequency and bias. Maximum drain leakage current is 10 µA at zero gate voltage.
The device uses LDMOS technology and is designed for digital predistortion error correction systems. It supports Class C operation with a greater negative gate-source voltage range. Junction-to-case thermal resistance is 0.37 °C/W for high-power operation with appropriate thermal management.
The A2V07H525-04NR6 is housed in a surface mount OM-1230-4L package with exposed backside source terminal.
The nominal drain-source operating voltage (VDD) is 48V.
The A2V07H525-04NR6 is offered in an OM-1230-4L surface mount package.
The existing database lists the part as RoHS3 Compliant, but this status is unverified.
It operates over 595 MHz to 851 MHz.
It provides 120W average output power under W-CDMA conditions with 9.9 dB PAR.
It meets Class 2 for Human Body Model and Class C3 for Charge Device Model.
The typical thermal resistance is 0.37°C/W at specified W-CDMA test conditions.