| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,500 pcs
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3500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
250 pcs
|
250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The A2V07H400-04NR3 is an asymmetrical Doherty RF power LDMOS transistor from NXP Semiconductors, designed for cellular base station power amplifiers. It delivers 107W average output power (W-CDMA) across the 420 to 851 MHz frequency range. Typical gain is 19.9 dB at 623 MHz with 59.4% drain efficiency. The device operates at 48V with a quiescent current of 700 mA.
The transistor features a dual configuration (carrier and peaking) integrated into a single OM-780G-4L surface mount package. Maximum drain-source voltage is 105V, and gate-source voltage range is -6V to +10V. The device is designed for digital predistortion error correction systems and supports Class C operation with a greater negative gate-source voltage range.
The package is rated for operating junction temperatures from -40°C to +225°C and case temperatures from -40°C to +150°C. Thermal resistance (junction to case) is 0.35°C/W under specified test conditions. ESD ratings are Class 2 (HBM) and Class C3 (CDM). Moisture sensitivity level is MSL 3 per JEDEC J-STD-020.
| Qty | Low | High |
|---|---|---|
| 250+ | $178.82 | $178.82 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum operating voltage (VDD) is 55V; typical operation is at 48V.
It comes in an OM-780G-4L surface mount package.
The operating junction temperature range is -40°C to +225°C, and the case operating temperature range is -40°C to +150°C.
420 MHz to 851 MHz.
19.9 dB.
107 W average (W-CDMA).
MSL 3.