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A2T27S020NR1 NXP A2T27S020NR1 is a 2.5W RF power LDMOS transistor designed for cellular base station applications from 400 to 2700 MHz. It operates at 28V with 185 mA quiescent current and is housed in a TO-270-2 surface mount package.
Mfr Part #:

A2T27S020NR1

Available from 2 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
NXP A2T27S020NR1 is a 2.5W RF power LDMOS transistor designed for cellular base station applications from 400 to 2700 MHz. It operates at 28V with 185 mA quiescent current and is housed in a TO-270-2 surface mount package.
✓ Total Stock: 1,294 pcs
$ Price Range: $11.97 - $20.15

A2T27S020NR1 Available from 2 distributors

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✓ Non-Authorised
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Xingangxin ✓
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1,000 pcs
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1000 pcs On Request 1 On Request On Request On Request On Request On Request
Flip Electronics ✓
Non-Authorised Inventory information
294 pcs
On Request
294 pcs On Request 1 On Request On Request On Request On Request On Request
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A2T27S020NR1 Specifications Quick View

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A2T27S020NR1 Description

Short technical summary and product information.

The NXP A2T27S020NR1 is an RF power LDMOS transistor designed for cellular base station driver applications. It delivers 2.5W average output power across a broadband frequency range of 400 MHz to 2.7 GHz. The device operates from a 28V drain supply with a quiescent current of 185 mA. Typical gain is 21.1 dB at 1840 MHz with drain efficiency of 20.9%. The transistor is built using N-channel enhancement-mode LDMOS technology and is optimized for digital predistortion error correction systems. It is housed in a TO-270-2 surface mount plastic package with the backside as the source terminal. The package offers low thermal resistance of 1.6°C/W junction-to-case. The device is rated for case operating temperatures from -40 to +150°C and junction temperatures up to 225°C. ESD classification is Class 2 (HBM) and Class C3 (CDM). Moisture sensitivity level is MSL 3 per JEDEC standards.

A2T27S020NR1 Quick Information

Product Type: RF Power LDMOS Transistor
Series: AIRFAST
Canonical Name: NXP A2T27S020NR1 RF Power LDMOS Transistor
Subcategory: LDMOS

A2T27S020NR1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 3 (260°C peak)
REACH Status: REACH Unaffected

A2T27S020NR1 Estimated Pricing

Qty Low High
1+ $20.15 $20.15
10+ $15.05 $15.05
25+ $13.96 $13.96
50+ $13.76 $13.76
500+ $12.32 $12.32
1,000+ $11.97 $11.97

Estimated market price range - modelled values for guidance only, not live distributor offers.

A2T27S020NR1 Features

  • 2.5W average output power LDMOS transistor.
  • Broadband 400-2700 MHz frequency range.
  • 28V drain supply with 185 mA quiescent current.
  • TO-270-2 surface mount package.
  • 21.1 dB typical gain at 1840 MHz.

A2T27S020NR1 Applications

  • Cellular base station driver amplifier.
  • Multi-band RF power amplification.
  • Digital predistortion error correction systems.
  • Universal broadband driver applications.

A2T27S020NR1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the A2T27S020NR1?

The nominal drain supply voltage is 28V, with a maximum operating voltage of 32V.

What package does the A2T27S020NR1 come in?

It is available in a TO-270-2 surface mount plastic package.

What is the operating temperature range?

The case operating temperature range is -40 to +150°C, and the junction temperature range is -40 to 225°C.

Is the A2T27S020NR1 RoHS compliant?

Yes, it is listed as RoHS3 compliant.

What is the typical gain of the A2T27S020NR1?

Typical gain is 21.1 dB at 1840 MHz, 20.8 dB at 1805 MHz, 19.8 dB at 2140 MHz, and 18.6 dB at 2605 MHz.

What frequency range does it support?

It covers 400 MHz to 2.7 GHz.

What is the output power?

Average output power is 2.5 W at 28V.

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