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A2T27S007NT1 The NXP A2T27S007NT1 is an RF power LDMOS transistor designed for cellular base station applications covering 400 to 2700 MHz. It delivers 28.8 dBm average output power at 28 V with typical gain of 22 dB at 2110 MHz.
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A2T27S007NT1

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The NXP A2T27S007NT1 is an RF power LDMOS transistor designed for cellular base station applications covering 400 to 2700 MHz. It delivers 28.8 dBm average output power at 28 V with typical gain of 22 dB at 2110 MHz.
✓ Total Stock: 22,000 pcs
$ Price Range: $8.31

A2T27S007NT1 Available from 1 distributor

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A2T27S007NT1 Specifications Quick View

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A2T27S007NT1 Description

Short technical summary and product information.

The NXP A2T27S007NT1 is an N-channel enhancement-mode lateral MOSFET (LDMOS) RF power transistor designed for cellular base station applications. It operates over a frequency range of 400 to 2700 MHz and delivers 28.8 dBm average output power at 28 V supply voltage.

 

Typical performance at 2110 MHz includes 22.0 dB gain, 22.8% drain efficiency, and -42.8 dBc ACPR under single-carrier W-CDMA modulation. The device features a maximum drain-source voltage of 65 V and gate-source voltage of 10 V. Quiescent current is typically 50 mA.

 

The transistor is optimized for Doherty applications and digital predistortion error correction systems. It offers a greater negative gate-source voltage range for improved Class C operation. The package is a 16-VDFN exposed pad (16-DFN 4x6 mm) for surface mount assembly, with the exposed backside serving as the source terminal.

 

Thermal resistance from junction to case is 3.8 °C/W. Operating junction temperature range is -40 to 225 °C. The device is ESD rated Class 1C (HBM) and Class C3 (CDM). MSL is Level 3 with 260°C peak reflow temperature.

A2T27S007NT1 Quick Information

Product Type: RF Power LDMOS Transistor
Series: Airfast
Canonical Name: NXP A2T27S007NT1 RF Power LDMOS Transistor, 400-2700 MHz, 28.8 dBm Avg., 28 V
Subcategory: RF MOSFETs

A2T27S007NT1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL Level 3, Peak Temp 260°C
REACH Status: Non-Compliant

A2T27S007NT1 Estimated Pricing

Qty Low High
36+ $8.31 $8.31

Estimated market price range - modelled values for guidance only, not live distributor offers.

A2T27S007NT1 Features

  • RF power LDMOS transistor for 400-2700 MHz.
  • 28.8 dBm average output power at 28 V.
  • Typical gain of 22 dB at 2110 MHz.
  • Surface mount 16-DFN (4x6 mm) package.
  • Optimized for Doherty and DPD systems.

A2T27S007NT1 Applications

  • Cellular base station power amplifier stages.
  • W-CDMA and multi-carrier communication systems.
  • Doherty amplifier driver and final stages.
  • Broadband RF driver applications up to 2700 MHz.

A2T27S007NT1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the A2T27S007NT1?

The operating voltage (VDD) is 28 V.

What is the frequency range of this transistor?

The frequency range is 400 to 2700 MHz.

What is the output power of the A2T27S007NT1?

The average output power is 28.8 dBm.

What package does the A2T27S007NT1 come in?

It comes in a 16-VDFN Exposed Pad package (16-DFN 4x6 mm) for surface mount.

What is the operating junction temperature range?

The operating junction temperature range is -40 to 225 °C.

What is the typical gain at 2110 MHz?

The typical gain is 22.0 dB at 2110 MHz under W-CDMA modulation.

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