| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,245 pcs
|
1245 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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The NXP A2T21S260W12NR3 is a 56 W RF power LDMOS transistor designed for wide instantaneous bandwidth applications in cellular base stations. It operates in the 2110 to 2200 MHz frequency range with a supply voltage of 28 V. The device is housed in an OM-880X-2L2L plastic package with chassis mount configuration. Key electrical characteristics include typical gain ranging from 17.0 dB at 2110 MHz to 18.2 dB at 2200 MHz, and drain efficiency from 30.0% to 32.9% across the band. The transistor is optimized for Doherty amplifier architectures and can withstand high output VSWR conditions. It is rated for a maximum drain-source voltage of 65 V, gate-source voltage of -6 to +10 V, and operating voltage up to 32 V. The device supports a junction temperature range of -40 to +225°C and has a thermal resistance of 0.24°C/W. It is moisture sensitivity level 3 (168 hours) and ESD classified as Class 2 (HBM) and Class C3 (CDM).
| Qty | Low | High |
|---|---|---|
| 1+ | $181.15 | $181.15 |
| 250+ | $72.28 | $72.28 |
| 500+ | $69.86 | $69.86 |
| 1,000+ | $68.67 | $68.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The device operates with a supply voltage (VDD) of 28 V typical, with a maximum operating voltage of 32 V.
The device is housed in an OM-880X-2L2L plastic package with chassis mount mounting.
The case operating temperature range is -40°C to +125°C, with a junction temperature range of -40°C to +225°C.
The device is listed as RoHS3 compliant, but this status is unverified.
The A2T21S260W12NR3 covers the frequency range of 2.11 GHz to 2.2 GHz.
The typical average output power is 56 W under W-CDMA modulation at 28 V and 1600 mA.
The MSL rating is 3 (168 hours) with a peak package temperature of 260°C.