| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Frequency | |
| Mounting Type | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage |
The A2T21S161W12SR3 is an RF power LDMOS transistor from NXP Semiconductors. It operates in the 2.11-2.2 GHz frequency range with a nominal output power of 38 W and a drain voltage of 28 V. This device uses LDMOS technology, which is designed for high-frequency power amplification. The transistor is offered in a chassis mount package with case style NI-780-2S2L, allowing for efficient thermal management in high-power RF systems. The chassis mount configuration is suitable for various RF power amplifier designs, particularly in applications requiring robust performance and heat dissipation.
28 V
NI-780-2S2L
Yes, it is RoHS3 compliant.
2.11 GHz to 2.2 GHz
38 W
LDMOS
Chassis Mount