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3,450 pcs
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3450 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The A2T21H360-23NR6 is an asymmetrical Doherty RF power LDMOS transistor from NXP Semiconductors, designed for cellular base station applications covering the frequency range of 2110 to 2200 MHz. It delivers 63W average output power under single-carrier W-CDMA modulation with a peak-to-average ratio of 9.9 dB.
Key electrical performance at 2140 MHz includes a typical gain of 16.8 dB, drain efficiency of 49.7%, and ACPR of -31.0 dBc. The device operates from a 28V supply with a quiescent current of 500 mA on the carrier side and 0.7V on the peaking side. The drain-source voltage rating is 65V maximum, and gate-source voltage range is -6V to +10V.
The transistor is housed in a OM-1230-4L2S plastic surface mount package with exposed backside source terminal. It supports a case operating temperature range of -40°C to +150°C and junction temperature up to +225°C. Thermal resistance from junction to case is 0.19°C/W at 72°C case temperature. ESD classification is HBM Class 2, MM Class B, and CDM Class IV. Moisture sensitivity level is MSL 3 with peak reflow temperature of 260°C.
The operating voltage (Vdd) is 28V typical, with a maximum rating of 32V.
It is offered in the OM-1230-4L2S plastic surface mount package.
The case operating temperature range is -40°C to +150°C, and the junction temperature range is -40°C to +225°C.
RoHS status is listed as RoHS3 compliant but is unverified from official sources.
Typical gain is 16.8 dB at 2140 MHz.
Typical drain efficiency is 49.7% at 2140 MHz.
ESD classification: Human Body Model Class 2, Machine Model Class B, Charge Device Model Class IV.