| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,100 pcs
|
2100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP A2T20H330W24SR6 is a dual RF LDMOS transistor designed for high-power RF applications. It delivers 58W of output power with a gain of 16.5 dB at a frequency of 1.88 GHz.
Operating from a 28V supply, it draws 700 mA of supply current. The device features LDMOS technology, offering high efficiency and linearity for demanding RF designs.
Housed in an NI-1230-4LS2L package, the transistor is designed for chassis mount installation, providing robust thermal management and mechanical stability.
With its dual configuration, this transistor is suitable for use in RF power amplifiers and transmitters where high power and reliability are required.
28 V.
NI-1230-4LS2L chassis mount.
RoHS3 Compliant (unverified).
58 W.
16.5 dB.
700 mA.
Yes, dual LDMOS configuration.