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6,500 pcs
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6500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP A2T18S262W12NR3 is an RF power LDMOS transistor designed for cellular base station applications requiring wide instantaneous bandwidth capability. It covers the frequency range of 1805 to 1880 MHz and delivers 56W average output power when operating at 28V with a quiescent current of 1600mA.
Key electrical characteristics include typical gain of 18.6 to 19.3 dB across the frequency band, drain efficiency of 31.9% to 33.1%, and a drain-source voltage rating of 65V. The device features a gate-source voltage range of -6 to +10V and an operating voltage rating of 32V. It is optimized for Doherty applications and can withstand high output VSWR conditions.
The transistor is housed in an OM-880X-2L2L plastic package with chassis mount configuration. The exposed backside of the package serves as the source terminal. Thermal resistance from junction to case is 0.23°C/W, and the device can operate at junction temperatures up to 225°C.
This device is suitable for wide instantaneous bandwidth applications and offers a greater negative gate-source voltage range for improved Class C operation. It is designed for cellular base station RF power amplification stages.
The maximum operating voltage (VDD) is 32 Vdc, with typical operation at 28 Vdc.
The device is available in an OM-880X-2L2L plastic package with chassis mount configuration.
The case operating temperature range is -40 to +150 °C, and the storage temperature range is -65 to +150 °C.
The device is listed as RoHS3 compliant, though this is unverified from the datasheet.
The typical output power is 56W average when tested at VDD=28Vdc, IDQ=1600mA, f=1880MHz with W-CDMA signal and PAR=9.9dB.
The device operates over 1.805 GHz to 1.88 GHz.
The thermal resistance from junction to case is 0.23 °C/W, measured at case temperature 72°C with 56W CW output.