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A2T18S260W12NR3 NXP A2T18S260W12NR3 AIRFAST RF power LDMOS transistor designed for cellular base station applications covering 1805 to 1880 MHz with 28V operation and 56W average output power.
Mfr Part #:

A2T18S260W12NR3

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
NXP A2T18S260W12NR3 AIRFAST RF power LDMOS transistor designed for cellular base station applications covering 1805 to 1880 MHz with 28V operation and 56W average output power.
✓ Total Stock: 6,500 pcs

A2T18S260W12NR3 Available from 1 distributor

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6,500 pcs
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A2T18S260W12NR3 Specifications Quick View

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A2T18S260W12NR3 Description

Short technical summary and product information.

The NXP A2T18S260W12NR3 is a 56W RF power LDMOS transistor designed for cellular base station applications requiring wide instantaneous bandwidth. It operates over the 1805 to 1880 MHz frequency range with a drain supply voltage of 28V and a drain quiescent current of 1.5 A. Typical single-carrier W-CDMA performance at 1840 MHz includes a power gain of 18.5 dB and a drain efficiency of 33.5%. The transistor is housed in the OM-880X-2L2L plastic package and is intended for chassis mount. It is optimized for Doherty amplifier configurations and can withstand high output VSWR and broadband operating conditions.

A2T18S260W12NR3 Quick Information

Product Type: RF Power LDMOS Transistor
Series: Airfast
Canonical Name: A2T18S260W12NR3 RF Power LDMOS Transistor
Subcategory: LDMOS FET

A2T18S260W12NR3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 3
REACH Status: REACH Unaffected

A2T18S260W12NR3 Features

  • 56W average W-CDMA output power.
  • Optimized for 1805-1880 MHz band.
  • Typical gain of 18.7 dB at 1880 MHz.
  • OM-880X-2L2L chassis mount package.
  • 28V drain supply with 1.5A quiescent current.

A2T18S260W12NR3 Applications

  • Cellular base station power amplifiers.
  • Doherty amplifier architectures.
  • Wide instantaneous bandwidth RF systems.
  • High VSWR tolerance applications.

A2T18S260W12NR3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the A2T18S260W12NR3?

The drain supply voltage (VDD) is 28V, with a maximum rating of 32V.

What is the package type?

The transistor is packaged in an OM-880X-2L2L plastic case and is intended for chassis mount.

What is the operating temperature range?

The operating junction temperature range is -40°C to +225°C. The case operating temperature range is -40°C to +125°C.

Is the device RoHS compliant?

The datasheet lists MSL 3 and 260°C peak temperature, but RoHS compliance is not explicitly confirmed in the datasheet. The distributor data indicates RoHS3 with low confidence.

What is the typical power gain at 1880 MHz?

The typical power gain (Gps) is 18.7 dB at 1880 MHz with VDD=28V, IDQ=1500mA, and Pout=56W average.

What are the maximum drain-source and gate-source voltage ratings?

The maximum drain-source voltage (VDSS) is 65V, and the maximum gate-source voltage (VGS) is 10V.

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