| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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22,000 pcs
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22000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The A2T18S260-12SR3 is a 50W RF power LDMOS transistor from NXP Semiconductors, part of the AIRFAST family. It is designed for cellular base station applications covering the 1805 to 1995 MHz frequency range. The device operates at 28V drain voltage with a quiescent current of 1.4A. Typical gain ranges from 18.9 to 19.6 dB across the band, with drain efficiency up to 31%. The transistor is optimized for Doherty amplifier configurations and digital predistortion systems. It is housed in a NI-780-2S2L package for chassis mount installation. The device features a maximum junction temperature of 225°C and is ESD classified to Class 2 HBM.
The device operates at 28V drain-source voltage.
The device is housed in a NI-780-2S2L package for chassis mount.
Case operating temperature: -40 to +150°C. Junction temperature: -40 to +225°C.
The device is listed as RoHS3 Compliant, but this is unverified.
It covers 1805 to 1995 MHz.
Typical gain ranges from 18.9 dB at 1805 MHz to 19.6 dB at 1995 MHz.
Average output power is 50W.