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A2T18S166W12SR3 NXP A2T18S166W12SR3 is an RF LDMOS transistor with 38W output power, 28V drain-source voltage, and frequency range 1.805GHz to 1.995GHz. It comes in a NI-780-2S2L chassis mount package.
Mfr Part #:

A2T18S166W12SR3

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
NXP A2T18S166W12SR3 is an RF LDMOS transistor with 38W output power, 28V drain-source voltage, and frequency range 1.805GHz to 1.995GHz. It comes in a NI-780-2S2L chassis mount package.
✓ Total Stock: 750 pcs
$ Price Range: $63.11

A2T18S166W12SR3 Available from 1 distributor

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✓ Non-Authorised
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Flip Electronics ✓
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750 pcs
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A2T18S166W12SR3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Frequency
Mounting Type
Power
Supplier Device Package
Tape & Reel
Technology
Voltage
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A2T18S166W12SR3 Description

Short technical summary and product information.

The NXP A2T18S166W12SR3 is an RF LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor designed for high-frequency power amplification. It operates over a frequency range of 1.805 GHz to 1.995 GHz, making it suitable for applications in the 1.8 GHz band.

 

This device delivers 38W of output power with a drain-source voltage of 28V. The LDMOS technology offers high gain and linearity for RF power applications.

 

The transistor is housed in a NI-780-2S2L package and is designed for chassis mount installation, providing efficient thermal management. The package is suitable for high-power RF circuits.

A2T18S166W12SR3 Quick Information

Product Type: RF LDMOS Transistor
Series: Airfast
Canonical Name: NXP A2T18S166W12SR3 RF LDMOS Transistor
Subcategory: LDMOS FET

A2T18S166W12SR3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 3
REACH Status: REACH Unaffected

A2T18S166W12SR3 Estimated Pricing

Qty Low High
250+ $63.11 $63.11

Estimated market price range - modelled values for guidance only, not live distributor offers.

A2T18S166W12SR3 Features

  • LDMOS technology for high RF power amplification.
  • 38W output power at 28V drain-source voltage.
  • Frequency range 1.805 GHz to 1.995 GHz.
  • NI-780-2S2L chassis mount package.
  • RoHS3 compliant and REACH unaffected.

A2T18S166W12SR3 Applications

  • Ideal for 1.8 GHz base station power amplifiers.
  • Used in industrial RF heating and plasma generators.
  • Suitable for broadcast transmitter final stages.
  • Applicable in land mobile radio amplifiers.

A2T18S166W12SR3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the A2T18S166W12SR3?

The drain-source voltage is 28V.

What package does the A2T18S166W12SR3 come in?

It comes in a NI-780-2S2L package for chassis mount.

Is the A2T18S166W12SR3 RoHS compliant?

Yes, it is listed as RoHS3 compliant (unverified).

What is the frequency range of this transistor?

It operates from 1.805 GHz to 1.995 GHz.

What is the output power of the A2T18S166W12SR3?

The output power is 38W.

What technology is used in this transistor?

It uses LDMOS technology.

What is the mounting type?

Chassis mount.

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