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A2T18S162W31GSR3 RF LDMOS transistor from NXP Semiconductors. Operates at 1.84 GHz with 32W output power, 20.1 dB gain, and 28V drain voltage in a chassis mount NI-780GS-2L2LA package.
Mfr Part #:

A2T18S162W31GSR3

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
RF LDMOS transistor from NXP Semiconductors. Operates at 1.84 GHz with 32W output power, 20.1 dB gain, and 28V drain voltage in a chassis mount NI-780GS-2L2LA package.
✓ Total Stock: 1,967 pcs

A2T18S162W31GSR3 Available from 1 distributor

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A2T18S162W31GSR3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Frequency
Gain
Mounting Type
Power
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A2T18S162W31GSR3 Description

Short technical summary and product information.

The A2T18S162W31GSR3 is an RF LDMOS transistor manufactured by NXP Semiconductors. It is designed for RF power applications at 1.84 GHz, delivering 32W of output power with a gain of 20.1 dB. The device operates with a drain-source voltage of 28V and a drain current of 1A.

 

This transistor is housed in a NI-780GS-2L2LA package and features chassis mount mounting, suitable for high-power RF amplifier designs. The LDMOS technology provides high efficiency and linearity for wireless infrastructure applications.

 

The part is RoHS3 compliant and REACH unaffected, with an MSL rating of 1 (unlimited). It is commonly used in base station transmitters and other RF power amplification stages.

A2T18S162W31GSR3 Quick Information

Product Type: RF LDMOS Transistor
Series: Airfast
Canonical Name: NXP A2T18S162W31GSR3 RF LDMOS Transistor
Subcategory: RF Power LDMOS Transistor

A2T18S162W31GSR3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

A2T18S162W31GSR3 Features

  • LDMOS technology for RF power amplification.
  • Operates at 1.84 GHz frequency.
  • Delivers 32W output power.
  • Provides 20.1 dB gain.
  • Chassis mount NI-780GS-2L2LA package.

A2T18S162W31GSR3 Applications

  • Ideal for RF power amplifier stages.
  • Used in wireless base station transmitters.
  • Suitable for 1.8 GHz band applications.
  • Designed for high-efficiency RF systems.

A2T18S162W31GSR3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the A2T18S162W31GSR3?

28 V drain-source voltage.

What package does the A2T18S162W31GSR3 come in?

NI-780GS-2L2LA.

Is the A2T18S162W31GSR3 RoHS compliant?

Yes, RoHS3 compliant (unverified).

What is the frequency range of this transistor?

1.84 GHz.

What is the output power?

32 W.

What is the gain?

20.1 dB.

What is the mounting type?

Chassis mount.

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