| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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140 pcs
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140 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The A2T18S160W31GSR3 is a high-power RF LDMOS transistor from NXP Semiconductors. It operates at 1.88 GHz and delivers 32 W of output power with a typical gain of 19.9 dB. The device requires a 28 V supply and draws 1 A of current.
Constructed using LDMOS technology, this transistor is housed in an NI-780GS-2L2LA package designed for chassis mount installation, providing excellent thermal management for high-power applications.
This component is suitable for RF power amplifier circuits that require high gain and linearity at frequencies around 1.88 GHz. Typical applications include base station transmitters and communication infrastructure amplifiers.
| Qty | Low | High |
|---|---|---|
| 250+ | $37.54 | $37.54 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
28 V.
NI-780GS-2L2LA.
RoHS3 Compliant (unverified).
1.88 GHz.
19.9 dB.
32 W.
Chassis Mount.