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A2T18H455W23NR6 RF Power LDMOS transistor for 1805-1880 MHz cellular base stations. Delivers 87W average output power at 31.5V with typical gain of 14.5 dB.
Mfr Part #:

A2T18H455W23NR6

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
RF Power LDMOS transistor for 1805-1880 MHz cellular base stations. Delivers 87W average output power at 31.5V with typical gain of 14.5 dB.
✓ Total Stock: 3,000 pcs
$ Price Range: $181.53

A2T18H455W23NR6 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
Non-Authorised Inventory information
3,000 pcs
On Request
3000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

A2T18H455W23NR6 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Frequency
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A2T18H455W23NR6 Description

Short technical summary and product information.

The A2T18H455W23NR6 is an 87W asymmetrical Doherty RF power LDMOS transistor from NXP Semiconductors, designed for cellular base station applications requiring very wide instantaneous bandwidth covering 1805 to 1880 MHz.

 

This device operates at 31.5 V and delivers 87 W average output power with typical drain efficiency of 48.1% at 1805 MHz. It features a typical power gain of 14.5 dB and ACPR of -32.7 dBc at the same operating point. The transistor supports a wide operating junction temperature range from -40 to +225 °C.

 

The A2T18H455W23NR6 is housed in the OM-1230-4L2S plastic package for chassis mount applications. It incorporates advanced high-performance in-package Doherty technology and high thermal conductivity packaging for reduced thermal resistance (0.23 °C/W).

A2T18H455W23NR6 Quick Information

Product Type: RF Power LDMOS Transistor
Series: Airfast
Canonical Name: A2T18H455W23NR6 RF Power LDMOS Transistor
Subcategory: LDMOS

A2T18H455W23NR6 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

A2T18H455W23NR6 Estimated Pricing

Qty Low High
2+ $181.53 $181.53

Estimated market price range - modelled values for guidance only, not live distributor offers.

A2T18H455W23NR6 Features

  • 87W average output power at 31.5V.
  • 1805 to 1880 MHz frequency range.
  • OM-1230-4L2S chassis mount package.
  • Typical power gain of 14.5 dB.
  • 48.1% drain efficiency at 1805 MHz.

A2T18H455W23NR6 Applications

  • Cellular base station power amplifiers.
  • Wide instantaneous bandwidth applications.
  • W-CDMA and multi-carrier signal amplification.
  • Digital predistortion error correction systems.

A2T18H455W23NR6 FAQs

4 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the A2T18H455W23NR6?

The nominal operating voltage (Vdd) is 31.5 V.

What is the package type for this transistor?

The device uses the OM-1230-4L2S plastic package with chassis mount.

What is the operating temperature range?

The operating junction temperature range is -40 to +225 °C and the case operating temperature range is -40 to +125 °C.

Is the A2T18H455W23NR6 RoHS compliant?

The part is listed as RoHS3 Compliant but this has not been verified from official documentation.

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