| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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450 pcs
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450 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The A2T07H310-24SR6 is a dual LDMOS RF power transistor from NXP Semiconductors. It is designed for high-frequency power amplification in the 880MHz band.
Key electrical specifications include a drain voltage of 28V, a quiescent current of 700mA, and an output power of 47W with a gain of 18.6dB. The device uses LDMOS technology and features a dual configuration.
The transistor is housed in a NI-1230-4LS2L package and is intended for chassis mount installation. This package provides robust thermal and electrical performance for demanding RF applications.
Typical applications include RF power amplifier stages in wireless communication systems, broadcast transmitters, and industrial RF energy equipment.
28V
NI-1230-4LS2L
RoHS3 Compliant (unverified)
880MHz
47W
18.6dB
Chassis Mount