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A2T07D160W04SR3 RF LDMOS transistor, dual configuration, 803 MHz, 30 W, 21.5 dB gain, 28 V, surface mount in NI-780S-4L package.
Mfr Part #:

A2T07D160W04SR3

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
RF LDMOS transistor, dual configuration, 803 MHz, 30 W, 21.5 dB gain, 28 V, surface mount in NI-780S-4L package.
✓ Total Stock: 22,000 pcs
$ Price Range: $113.88

A2T07D160W04SR3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
22,000 pcs
On Request
22000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

A2T07D160W04SR3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Frequency
Gain
Mounting Type
Power
Supplier Device Package
Tape & Reel
Technology
Voltage
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A2T07D160W04SR3 Description

Short technical summary and product information.

The A2T07D160W04SR3 is an RF LDMOS transistor from NXP Semiconductors designed for high-frequency power amplification. It operates at 803 MHz with a gain of 21.5 dB and delivers 30 W of output power. The device features a dual configuration and requires a 28 V supply with a quiescent current of 450 mA.

 

This transistor is housed in a surface-mount NI-780S-4L package, suitable for automated assembly processes. The LDMOS technology provides high efficiency and linearity for RF power applications.

 

Typical applications include wireless infrastructure, base station power amplifiers, and other RF transmitter stages requiring high power at UHF frequencies.

A2T07D160W04SR3 Quick Information

Product Type: RF Transistor
Series: Airfast
Canonical Name: A2T07D160W04SR3
Subcategory: LDMOS

A2T07D160W04SR3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

A2T07D160W04SR3 Estimated Pricing

Qty Low High
250+ $113.88 $113.88

Estimated market price range - modelled values for guidance only, not live distributor offers.

A2T07D160W04SR3 Features

  • LDMOS technology for high efficiency.
  • Dual configuration for balanced designs.
  • 30 W output power at 803 MHz.
  • 21.5 dB gain at 28 V supply.
  • Surface mount NI-780S-4L package.

A2T07D160W04SR3 Applications

  • Wireless base station power amplifiers.
  • UHF transmitter output stages.
  • RF energy and industrial heating.
  • Repeater and booster amplifiers.

A2T07D160W04SR3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the operating frequency of the A2T07D160W04SR3?

803 MHz.

What is the output power of this transistor?

30 W.

What is the gain of the A2T07D160W04SR3?

21.5 dB.

What is the supply voltage required?

28 V.

What package is this device available in?

NI-780S-4L surface mount package.

Is the A2T07D160W04SR3 RoHS compliant?

RoHS3 Compliant (unverified).

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