| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,506,667 pcs
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1506667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name |
The A2SHB is an N-channel logic enhancement mode power field-effect transistor manufactured by Vishay Dale. It features a high cell density, DMOS trench technology designed to minimize on-state resistance. This MOSFET has a Drain-Source Voltage rating of 20V and comes in a SOT-23 package.
This component is suitable for various electronic applications requiring an N-channel MOSFET. Its SOT-23 packaging makes it ideal for surface-mount designs where space is a constraint. The device is described as RoHS3 Compliant, with an MSL rating of 1 Unlimited and REACH Unaffected status.
Additional specifications such as on-resistance, gate threshold voltage, continuous drain current, and power dissipation would typically be found in the datasheet, which is not currently linked. However, the available information indicates a standard N-channel MOSFET suitable for general-purpose switching and amplification tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Voltage for the A2SHB MOSFET is 20V.
The A2SHB MOSFET is supplied in a SOT-23 package.
The A2SHB MOSFET is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the A2SHB MOSFET is 1 Unlimited.
The REACH status for the A2SHB MOSFET is Unaffected.