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15 pcs
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15 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors A2I09VD030GNR1 is a wideband integrated RF power amplifier designed for cellular base station applications. It features on-chip matching for a 50 ohm input and is DC blocked, making integration simpler.
This multi-stage amplifier operates within a frequency range of 575 to 1300 MHz and is rated for 48 to 55 Vdc operation. It covers typical cellular base station modulation formats. Performance metrics include an average output power of 4 W at 900 MHz and 700 MHz under W-CDMA conditions, with typical gains ranging from 30.9 dB to 34.5 dB across specified frequencies.
The device is optimized for Doherty applications and designed for digital predistortion error correction systems. It includes integrated quiescent current temperature compensation with an enable/disable function. The package type is TO-270WBG-15, suitable for surface mount applications.
Key electrical specifications include a maximum drain-source voltage of 105 Vdc and a maximum gate-source voltage of 10 Vdc. Input power is rated up to 20 dBm. Thermal characteristics include a junction-to-case thermal resistance of 6.7 °C/W under specific operating conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The A2I09VD030GNR1 operates from 48 to 55 Vdc.
The A2I09VD030GNR1 is supplied in a TO-270WBG-15 package.
The A2I09VD030GNR1 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the A2I09VD030GNR1 is 1.
The A2I09VD030GNR1 amplifier operates over a frequency range of 575 to 1300 MHz.
The typical output power of the A2I09VD030GNR1 at 900 MHz is 4 W Avg.
The typical gain of the A2I09VD030GNR1 at 940 MHz is 34.5 dB.