| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,500 pcs
|
1500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Frequency | |
| Gain | |
| Mounting Type | |
| RF Type | |
| Supplier Device Package | |
| Supplier Package | |
| Test Frequency | |
| Voltage |
The NXP Semiconductors A2I09VD015NR1 is a wideband integrated RF power amplifier designed for cellular base station applications. It operates within a frequency range of 575MHz to 960MHz, supporting typical cellular base station modulation formats.
This device features on-chip matching for a 50-ohm input and is rated for 48V to 55V operation. Key electrical characteristics include a typical gain of 34dB and a typical output power of 2W average at 920MHz. It also offers integrated quiescent current temperature compensation with an enable/disable function and is designed for digital predistortion error correction systems.
The A2I09VD015NR1 is available in a TO-270WB-15 package and is designed for surface mount applications. The exposed backside of the package serves as the source terminal for the transistor. Its robust design makes it optimized for Doherty applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The A2I09VD015NR1 operates from 575MHz to 960MHz.
The typical gain for the A2I09VD015NR1 is 34dB.
The A2I09VD015NR1 is rated for 48V to 55V operation.
The A2I09VD015NR1 is supplied in a TO-270WB-15 package.
The A2I09VD015NR1 is designed for surface mount.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.