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A2I08H040NR1 RF LDMOS transistor by NXP Semiconductors, dual configuration, 920 MHz, 9 W, 30.7 dB gain, 28 V, surface mount in TO-270WB-15 package.
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A2I08H040NR1

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
RF LDMOS transistor by NXP Semiconductors, dual configuration, 920 MHz, 9 W, 30.7 dB gain, 28 V, surface mount in TO-270WB-15 package.
✓ Total Stock: 215 pcs

A2I08H040NR1 Available from 1 distributor

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A2I08H040NR1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Frequency
Gain
Mounting Type
Power
Supplier Device Package
Tape & Reel
Technology
Voltage
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A2I08H040NR1 Description

Short technical summary and product information.

The A2I08H040NR1 is an RF LDMOS transistor from NXP Semiconductors designed for RF power amplification applications. It operates at a typical frequency of 920 MHz with a nominal output power of 9 W and a typical gain of 30.7 dB. The device features a dual configuration and requires a nominal supply voltage of 28 V with a nominal current of 25 mA.

 

This transistor is housed in a TO-270-15 variant with flat leads, specifically the TO-270WB-15 supplier device package, and is designed for surface mount mounting. The LDMOS technology offers high efficiency and linearity for RF applications.

 

The part is RoHS3 compliant and has an MSL rating of Level 1 (unlimited). It is suitable for use in wireless infrastructure and other RF power systems where high gain and efficiency are required.

A2I08H040NR1 Quick Information

Product Type: RF LDMOS Transistor
Canonical Name: A2I08H040NR1 NXP Semiconductors RF LDMOS Transistor
Subcategory: LDMOS

A2I08H040NR1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 3
REACH Status: REACH Unaffected

A2I08H040NR1 Features

  • LDMOS technology for RF amplification.
  • 920 MHz typical operating frequency.
  • 9 W nominal output power.
  • 30.7 dB typical gain.
  • Surface mount TO-270WB-15 package.

A2I08H040NR1 Applications

  • RF power amplifier circuits.
  • Wireless infrastructure equipment.
  • High gain RF amplification stages.

A2I08H040NR1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the operating frequency of the A2I08H040NR1?

The typical operating frequency is 920 MHz.

What is the output power of this RF transistor?

The nominal output power is 9 W.

What is the gain of the A2I08H040NR1?

The typical gain is 30.7 dB.

What is the supply voltage requirement?

The nominal supply voltage is 28 V.

What package does the A2I08H040NR1 come in?

It comes in a TO-270-15 variant with flat leads, supplier device package TO-270WB-15, for surface mount mounting.

Is the A2I08H040NR1 RoHS compliant?

Yes, it is RoHS3 compliant.

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