| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,302 pcs
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4302 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The A2I08H040GNR1 is an RF power amplifier transistor from NXP Semiconductors, designed for applications operating at 920 MHz. It delivers 9 W of output power with a gain of 30.7 dB, making it suitable for RF amplification stages in communication systems.
The device uses LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology, which is known for high efficiency and linearity in RF power applications. It features a dual configuration, allowing for balanced or push-pull circuit designs.
The A2I08H040GNR1 is housed in a TO-270-15 variant with gull wing leads, and the supplier device package is TO-270WBG-15. It is designed for surface mount mounting, facilitating automated assembly processes.
Typical test conditions include a supply voltage of 28 V and a test current of 25 mA. These specifications provide a reference for evaluating the device's performance in a standard operating environment.
| Qty | Low | High |
|---|---|---|
| 500+ | $7.60 | $7.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The output power is 9 W.
The gain is 30.7 dB.
The operating frequency is 920 MHz.
The package is TO-270-15 Variant, Gull Wing, with supplier device package TO-270WBG-15.
The mounting type is Surface Mount.
The configuration is Dual.
The test voltage is 28 V and the test current is 25 mA.