| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,464 pcs
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2464 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The A2G22S160-01SR3 is an RF LDMOS transistor from NXP Semiconductors designed for power amplifier applications. It provides a typical output power of 32 W at 2.11 GHz with a nominal drain voltage of 48 V. The device features a typical gain of 19.6 dB and a drain current of 150 mA.
Constructed with LDMOS technology, this transistor offers high efficiency and linearity for RF power amplification. The NI-400S-2S package supports surface mount assembly, suitable for automated manufacturing processes. The device is listed as RoHS3 compliant, REACH unaffected, and MSL Level 1, though these compliance statuses are unverified.
This component is intended for use in communications infrastructure, such as base station transmitters, and other RF power systems operating in the 2.11 GHz band. The lack of specified test conditions for gain and power output should be considered during design validation.
The nominal drain voltage is 48 V.
The device is available in a NI-400S-2S surface mount package.
It is reported as RoHS3 compliant, though this status is unverified.
The typical output power is 32 W.
The nominal operating frequency is 2.11 GHz.
The typical gain is 19.6 dB.
The typical drain current is 150 mA.