| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
15 pcs
|
15 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type | |
| Storage Temperature |
The STMicroelectronics 9N150 is a high-voltage N-channel Power MOSFET utilizing the PowerMESH™ process. It is designed for demanding switching applications requiring high performance and reliability.
Key electrical characteristics include a maximum drain-source voltage (Vds) of 1500V and a continuous drain current (ID) of 8A at 25°C. The on-resistance (RDS(on)) is specified as less than 2.5Ω, contributing to efficient power handling. The device also features a gate threshold voltage (Vgs(th)) of 3V and a pulsed drain current (IDM) of 32A.
This MOSFET is housed in a TO-247 package, suitable for through-hole mounting. It operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 320W at 25°C. The design emphasizes low intrinsic capacitances and minimized gate charge for high-speed switching capabilities.
Features such as 100% avalanche testing and avalanche ruggedness make the STW9N150 suitable for applications where transient voltage spikes may occur. Its strengthened layout and proprietary edge termination structure contribute to its outstanding performance characteristics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the 9N150 is 1500V when the gate-source voltage (Vgs) is 0.
The continuous drain current (ID) for the 9N150 at a case temperature of 25°C is 8A.
The maximum on-resistance (RDS(on)) for the 9N150 is less than 2.5Ω.
The 9N150 is available in the TO-247 package, which is a through-hole mount type.
The 9N150 can operate in a temperature range from -55°C to 150°C.