| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5 pcs
|
5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Tape & Reel |
The 8533AG-01 is a N-Channel MOSFET from Integrated Device Technology, designed for clock buffer and driver applications. It operates with a drain-source voltage (Vds) of 30V and offers a low on-resistance (RDS(ON)) of 26.5mΩ at 5.7A and 10V. The typical on-resistance is 27mΩ.
This component features a high cell density trenched design, delivering good RDS(ON) and efficiency for small power switching and load switch applications. It has a gate charge (Qg) of 7nC at 4.5V and an input capacitance of 630pF at 15V.
The 8533AG-01 is supplied in a TO-236-3, SC-59, SOT-23-3 package, suitable for surface mounting. It is delivered on tape and reel (TR).
Environmental compliance includes RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status. These specifications make it suitable for various electronic designs requiring efficient switching and signal integrity.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.00 | $3.00 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) is 30V.
The maximum on-resistance (RDS(ON)) is 26.5mΩ at 5.7A and 10V.
The typical on-resistance (RDS(ON)) is 27mΩ.
The gate charge (Qg) is 7nC at 4.5V.
The input capacitance is 630pF at 15V.
The 8533AG-01 is available in a TO-236-3, SC-59, SOT-23-3 package.
The mounting type is Surface Mount.