| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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58 pcs
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58 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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The UTC 75N75 from Unisonic Technologies is an N-Channel enhancement mode power field-effect transistor. It is engineered for applications requiring stable off-state characteristics, fast switching speeds, and low thermal resistance, commonly found in telecom and computer systems.
Key electrical specifications include a drain-source breakdown voltage of 75V and a continuous drain current of 80A at 25°C. The static drain-source on-state resistance is a low 11 mΩ maximum at VGS=10V and ID=40A. Dynamic characteristics include input capacitance (CISS) of 4000pF, output capacitance (COSS) of 750pF, and reverse transfer capacitance (CRSS) of 86pF.
This MOSFET is available in TO-220, TO-220F, TO-220F1, TO-220F2, and TO-263 packages. It features improved dv/dt capability and high ruggedness, making it suitable for demanding applications. The device operates within a junction temperature range of -55°C to +175°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is 80A at 25°C.
The drain-source breakdown voltage (BVDSS) is 75V.
The static drain-source on-state resistance (RDS(ON)) is a maximum of 11 mΩ at VGS=10V and ID=40A.
The 75N75 is available in TO-220, TO-220F, TO-220F1, TO-220F2, and TO-263 packages.
The operating junction temperature range is -55°C to +175°C.