| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
79 pcs
|
79 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| Power Dissipation |
The 75639S from On Semiconductor is an N-Channel Ultrafet Power MOSFET manufactured using an advanced process technology for low on-resistance. This device is rated for 100V drain-to-source voltage and 56A continuous drain current, with a typical on-resistance of 0.025 Ohms.
Designed for applications where power efficiency is critical, such as switching regulators, converters, and motor drivers, the 75639S offers robust performance. It is capable of withstanding high energy in avalanche mode and features a very low diode reverse recovery time and stored charge.
The MOSFET is available in a TO-263AB package, suitable for surface mount applications. It operates within a temperature range of -55°C to 175°C and is RoHS compliant, Pb-free, and Halogen Free.
Key electrical specifications include a gate-to-source voltage of ±20V and a power dissipation of 200W. The Ultrafet process ensures outstanding performance with the lowest possible on-resistance per silicon area.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) of the 75639S MOSFET is 100V.
The continuous drain current (Id) for the 75639S is 56A.
The on-resistance of the 75639S MOSFET is 0.025 Ohm.
The operating and storage temperature range for the 75639S is -55°C to 175°C.
Yes, the 75639S is RoHS3 Compliant.
The 75639S is available in a TO-263AB package.