| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8,970 pcs
|
8970 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request |
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The 74VCXH245MNR2 from ON Semiconductor is an advanced, high-speed, low-power 8-bit transceiver. It is designed for operation in 1.8V, 2.5V, or 3.3V systems, with a supply voltage range of 1.65V to 3.6V.
This non-inverting transceiver utilizes byte control with Transmit/Receive (T/Rn) inputs to manage data flow direction. The Output Enable (OE) input, when HIGH, places both A and B ports into a high impedance (HIGH Z) state. Integrated active bushold circuitry eliminates the need for external pull-up resistors on unused or floating data inputs, ensuring a valid logic state.
Key electrical characteristics include high-speed operation with propagation delays as low as 3.5 ns at 3.0-3.6V. It offers static drive capabilities of ±24 mA at 3.0V. The device also boasts near-zero static supply current in all three logic states, significantly reducing system power requirements. Latchup performance exceeds ±200 mA at 85°C, and ESD protection is robust, with Human Body Model exceeding 2000V and Machine Model exceeding 200V.
The 74VCXH245MNR2 is available in a 20-QFN (2.5x4.5) package, suitable for surface mounting. It is offered in a 3000-unit tape and reel configuration. A Pb-Free package option is also available.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.20 | $1.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage range is 1.65 V to 3.6 V.
The device is available in a 20-VFQFN Exposed Pad package (20-QFN 2.5x4.5) for surface mount.
It operates from -40°C to 85°C.
The maximum propagation delay is 3.5 ns at 3.0-3.6 V, 4.2 ns at 2.3-2.7 V, and 8.4 ns at 1.65-1.95 V.
The output can sink or source ±24 mA at 3.0 V, ±18 mA at 2.3 V, and ±6 mA at 1.65 V.
ESD protection exceeds 2000 V Human Body Model and 200 V Machine Model.
Latch-up performance exceeds ±200 mA at 85°C.