| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,175 pcs
|
1175 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
868 pcs
|
868 pcs | On Request | 1 | On Request | On Request | 930 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Input Logic Level | |
| Latch-up Performance | |
| Lead Spacing | |
| Lead Style | |
| Logic Type | |
| Max Propagation Delay @ V, Max CL | |
| Mounting Type | |
| Number of Circuits | |
| Number of Inputs | |
| Operating Temperature | |
| Operating Voltage | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Voltage |
The 74HCT30N,652 from NXP Semiconductors is an 8-input NAND gate integrated circuit. It is designed for digital logic applications requiring a high-performance NAND function.
Key electrical characteristics include a wide supply voltage range from 2.0 V to 6.0 V, supporting flexible power configurations. The device offers CMOS low power dissipation and high noise immunity, making it suitable for various environments. It has a maximum propagation delay of 28ns at 4.5V and 50pF.
This IC is specified for operation across a wide temperature range, from -40 °C to +125 °C. It features ESD protection exceeding 2000 V (HBM) and 1000 V (CDM), along with latch-up performance exceeding 100 mA.
The 74HCT30N,652 is available in a 14-DIP (Dual In-line Package) through-hole mounting type, with a package/case code of SOT108-1 or SOT402-1. Its inputs include clamp diodes, allowing the use of current limiting resistors for interfacing with voltages exceeding VCC.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.22 | $0.22 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
2.0V to 6.0V, with a typical range of 4.5V to 5.5V.
-40°C to +125°C.
14-DIP (0.300", 7.62mm) through-hole package.
28ns maximum at 4.5V and 50pF load.
8 inputs.
2V.
Yes, ESD protection exceeds 2000V HBM and 1000V CDM.