| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,500 pcs
|
1500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Circuit | |
| Current | |
| ESD Protection | |
| Independent Circuits | |
| Input Logic Level | |
| Latch-up Performance | |
| Mounting Type | |
| Operating Temperature | |
| Operating Voltage | |
| Supplier Device Package | |
| Supplier Package Code | |
| Type | |
| Voltage | |
| Voltage Supply Source |
The 74HC253D,653 from Nexperia (NXP Semiconductors) is a dual 4-input multiplexer with 3-state outputs, designed for efficient data selection and routing. Each multiplexer has four binary inputs and a shared select input, allowing one of the four inputs to be routed to the output. The output enable input (nOE) controls the output state, enabling a high-impedance OFF-state when HIGH.
This device supports a wide supply voltage range from 2.0 V to 6.0 V and operates across a temperature range of -40 °C to +125 °C. It features a non-inverting data path and common select inputs with separate output enable inputs. The 74HC253 variant operates at CMOS levels, while the 74HCT253 variant operates at TTL levels. Its latch-up performance exceeds 100 mA per JESD 78 Class II Level B, and it complies with JEDEC standards JESD8C and JESD7A.
Packaged in a 16-SOIC (0.154", 3.90mm Width) surface-mount package, the 74HC253D,653 is suitable for applications requiring compact board layouts. It offers high noise immunity and low CMOS power dissipation, making it a versatile component for data selectors and data multiplexer functions in digital systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.50 | $0.50 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
2.0 V to 6.0 V single supply.
16-SOIC (0.154", 3.90mm Width) surface mount package.
-40°C to +125°C.
2 x 4:1 multiplexer (dual 4-input).
CMOS levels.
HBM exceeds 2000 V, CDM exceeds 1000 V.
7.8 mA.