MM74HC157MX
On Semiconductor
The On Semiconductor MM74HC157MX is a Quad 2-Input Multiplexer in a 16-SOIC package. It operates from a 2V to 6V supply voltage.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,100 pcs
|
2100 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Circuit | |
| Current | |
| Independent Circuits | |
| Mounting Type | |
| Operating Temperature | |
| Supplier Device Package | |
| Type | |
| Voltage | |
| Voltage Supply Source |
The Toshiba 74HC157D is a high-speed CMOS digital integrated circuit featuring a quad 2-channel multiplexer function. Fabricated with silicon gate C2MOS technology, it offers high-speed operation comparable to LSTTL while maintaining low CMOS power dissipation. The device operates over a wide voltage range from 2.0V to 6.0V and has a broad operating temperature range of -40°C to 125°C, with the extended range applicable for products manufactured after July 2020.
This multiplexer has a 4 x 2:1 circuit configuration and is designed for surface mounting, coming in a 16-SOIC package. The SELECT decoding determines data transfer from A or B inputs to their corresponding Y outputs. When STROBE is held high, data selection is inhibited, and all outputs become low. All inputs are equipped with protection circuits against static discharge or transient excess voltage. Key electrical characteristics include a typical propagation delay of 10 ns at 5V and a maximum low power dissipation of 4.0 µA at 25°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.50 | $0.50 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 74HC157D operates from 2V to 6V.
The 74HC157D operates from -40°C to +85°C.
The 74HC157D is available in a 16-SOIC surface-mount package (0.154" width, 3.90mm).
The typical propagation delay is 10 ns at VCC = 5V.
The maximum quiescent current is 4.0 µA at Ta = 25°C.