| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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40 pcs
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40 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Renesas 71V67703S80BQ is a high-performance 9Mbit SRAM memory integrated circuit designed for various applications. It operates with a clock frequency of 100 MHz and offers a fast access time of 8 ns, making it suitable for demanding systems.
This memory IC utilizes Synchronous SDR technology and has a memory organization of 256K x 36. It operates within a voltage range of 3.135V to 3.465V and has an operating temperature range of 0°C to 70°C (TA). The component is housed in a 165-CABGA (13x15) package and is designed for surface mounting.
Key electrical characteristics include its 9Mbit volatile memory capacity and parallel interface. The device is specified for reliable operation within the defined temperature and voltage parameters, supporting efficient data storage and retrieval in electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.24 | $1.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
3.135V to 3.465V.
165-TBGA (also known as 165-CABGA 13x15).
0°C to 70°C (TA).
9Mbit.
100 MHz.
8 ns.
256K x 36.