| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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106 pcs
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106 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Integrated Device Technology 71V424L10YGI is a high-performance 4Mbit CMOS Static RAM designed for various applications. It offers a memory organization of 512K x 8-bit and operates with a supply voltage of 3.3V ± 10%.
Key electrical characteristics include a read cycle time of 10 ns and an address access time of 10 ns, ensuring fast data retrieval. The device supports a write cycle time of 10 ns and features various timing parameters such as chip select access time, output enable to output valid, and write pulse width, all optimized for speed and efficiency.
Packaged in a 44T configuration, this SRAM is suitable for applications requiring reliable and rapid data storage. Its CMOS technology ensures low power consumption during operation. The device is characterized for commercial and industrial temperature ranges, providing versatility for different operating environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 71V424L10YGI has a memory size of 4Mbit.
The operating voltage for the 71V424L10YGI is 3.3V ± 10%.
The 71V424L10YGI comes in a 44T package.
The read cycle time for the 71V424L10YGI is 10 ns.
The address access time for the 71V424L10YGI is 10 ns.
The write cycle time for the 71V424L10YGI is 10 ns.