71V416S10BE The 71V416S10BE is a 4Mbit asynchronous SRAM from Integrated Device Technology. It features a 10ns access time and operates from a 3V to 3.6V supply.
Mfr Part #:

71V416S10BE

Available from 1 distributors
Mfr Name: Integrated Device Technology
Integrated Device Technology
The 71V416S10BE is a 4Mbit asynchronous SRAM from Integrated Device Technology. It features a 10ns access time and operates from a 3V to 3.6V supply.
✓ Total Stock: 20 pcs
$ Price Range: $1.24

71V416S10BE Available from 1 distributor

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71V416S10BE Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Access Time
Memory Format
Memory Interface
Memory Organization
Memory Size
Memory Type
Mounting Type
Operating Temperature
SVHC Present
Supplier Device Package
Technology
Voltage
Voltage Supply
Write Cycle Time

71V416S10BE Description

Short technical summary and product information.

The 71V416S10BE is a 4Mbit asynchronous Static Random-Access Memory (SRAM) chip manufactured by Integrated Device Technology. It offers a fast 10ns access time and a 10ns write cycle time, making it suitable for high-speed data storage applications.

 

This SRAM has a memory organization of 256K words by 16 bits and utilizes a parallel interface. It operates within a voltage supply range of 3V to 3.6V and is designed for surface mounting in a 48-CABGA (9x9) or 48-TFBGA package. The operating temperature range is from 0°C to 70°C.

 

Applications for this component include high-speed buffering and caches in networking equipment, routers, and telecom systems. It is also suitable for industrial control memory and video/audio processing requiring rapid data storage. The part is noted as obsolete, intended for repair, legacy system support, and maintenance.

 

Selection guidelines suggest checking compatibility with the 3-3.6V voltage range and the 0°C to 70°C temperature range. Verification of the parallel interface and 16-bit data width is important, as is confirming the feasibility of BGA mounting. The RoHS status is non-compliant, which should be considered for lead-free or environmentally restricted designs.

71V416S10BE Quick Information

Product Type: SRAM
Canonical Name: 4Mbit Asynchronous SRAM Memory Chip
Subcategory: Memory

71V416S10BE Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

71V416S10BE Estimated Pricing

Qty Low High
1+ $1.24 $1.24

Estimated market price range - modelled values for guidance only, not live distributor offers.

71V416S10BE Features

  • 4Mbit asynchronous SRAM memory chip.
  • Fast 10ns access and write cycle times.
  • Parallel interface with 256K x 16 organization.
  • Operates from 3V to 3.6V supply.
  • Surface mount 48-CABGA package.

71V416S10BE Applications

  • High-speed buffering and caches.
  • Networking and telecom equipment.
  • Industrial control memory.
  • Video and audio processing.

71V416S10BE FAQs

7 frequently asked questions generated from this part’s specifications.
What is the supply voltage for the 71V416S10BE?

The supply voltage is 3.3V with a range of 3V to 3.6V.

What package is the 71V416S10BE available in?

It is available in a 48-CABGA (9x9mm) package, also specified as 48-TFBGA.

What is the operating temperature range?

0°C to 70°C.

What is the memory size of the 71V416S10BE?

4Mbit (256K x 16).

What is the access time?

10 ns.

What interface does it use?

Parallel interface.

Is it volatile or non-volatile?

Volatile.

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