| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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20 pcs
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20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 71V416S10BE is a 4Mbit asynchronous Static Random-Access Memory (SRAM) chip manufactured by Integrated Device Technology. It offers a fast 10ns access time and a 10ns write cycle time, making it suitable for high-speed data storage applications.
This SRAM has a memory organization of 256K words by 16 bits and utilizes a parallel interface. It operates within a voltage supply range of 3V to 3.6V and is designed for surface mounting in a 48-CABGA (9x9) or 48-TFBGA package. The operating temperature range is from 0°C to 70°C.
Applications for this component include high-speed buffering and caches in networking equipment, routers, and telecom systems. It is also suitable for industrial control memory and video/audio processing requiring rapid data storage. The part is noted as obsolete, intended for repair, legacy system support, and maintenance.
Selection guidelines suggest checking compatibility with the 3-3.6V voltage range and the 0°C to 70°C temperature range. Verification of the parallel interface and 16-bit data width is important, as is confirming the feasibility of BGA mounting. The RoHS status is non-compliant, which should be considered for lead-free or environmentally restricted designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.24 | $1.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The supply voltage is 3.3V with a range of 3V to 3.6V.
It is available in a 48-CABGA (9x9mm) package, also specified as 48-TFBGA.
0°C to 70°C.
4Mbit (256K x 16).
10 ns.
Parallel interface.
Volatile.