| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4 pcs
|
4 pcs | On Request | 1 | On Request | On Request | 8709 | On Request | On Request |
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| Manufacturer Name | |
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| Memory Interface | |
| Memory Organization | |
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| Memory Type | |
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| Operating Voltage | |
| Supplier Device Package | |
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| Write Cycle Time |
This Integrated Device Technology 6116SA35TDB is a 256 Kbit SRAM memory integrated circuit. It utilizes a parallel interface and operates as a dual-port, asynchronous memory.
The device supports a memory organization of 16K x 16 bits, with an access time of 20 ns and a write cycle time of 20 ns for word and page operations. The operating voltage range is specified from 4.5V to 5.5V, and it operates within a temperature range of 0°C to 70°C.
Designed for surface mounting, the 6116SA35TDB comes in a 100-LQFP package, with the supplier device package specified as 100-TQFP (14x14). This component is classified as obsolete.
Key electrical characteristics include its SRAM technology, 256 Kbit memory size, and parallel interface. The operating conditions are suitable for a standard commercial temperature range.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
SRAM
256 Kbit
20 ns
4.5 V to 5.5 V
0°C to 70°C
100-TQFP (14x14)