| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-06-29 21:33:16 |
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This Renesas 6116SA35TDB is a volatile SRAM memory integrated circuit with a capacity of 16Kbit. It utilizes an asynchronous SRAM technology and features a parallel interface for data transfer.
The device provides a memory organization of 2K x 8 bits, with an access time of 35 ns and a write cycle time also rated at 35 ns. It operates within a supply voltage range of 4.5V to 5.5V.
Designed for through-hole mounting, the 6116SA35TDB comes in a 24-CDIP package, specifically a 24-CDIP (0.300", 7.62mm). The operating temperature range is specified from -55°C to 125°C (TA).
This component is suitable for applications requiring reliable and fast memory access within the specified environmental and electrical conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.24 | $1.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 6116SA35TDB has 16Kbit of memory organized as 2K words by 8 bits (2K x 8).
The access time is 35 ns.
The operating voltage range is 4.5V to 5.5V.
The operating temperature range is -55°C to 125°C.
The package is 24-CDIP (0.300", 7.62mm) with a supplier device package of 24-CDIP.
The memory interface is parallel.
The mounting type is through hole.