| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
102 pcs
|
102 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Access Time | |
| Memory Interface | |
| Memory Organization | |
| Memory Size | |
| Memory Type | |
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| Write Cycle Time |
The 6116SA25TDB is an obsolete 16Kbit asynchronous SRAM memory integrated circuit from Integrated Device Technology. It features a memory organization of 2K x 8 and supports a parallel memory interface.
This device operates with a maximum access time of 25 ns and a write cycle time of 25 ns. The supply voltage range is specified from 4.5V to 5.5V. The operating temperature range for this component is -55°C to 125°C.
Packaged in a 24-CDIP through-hole configuration, the 6116SA25TDB is classified as obsolete. Substitute components may be necessary for new designs or system maintenance. The 6116LA20SOG from Renesas Electronics Corporation is identified as a suitable replacement, offering identical memory capacity and organization with improved performance characteristics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 16Kbit.
The memory organization is 2K x 8.
The maximum access time is 25 ns.
The supply voltage range is 4.5V to 5.5V.
The operating temperature range is -55°C to 125°C.
The package type is 24-CDIP through-hole.