| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8 pcs
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8 pcs | On Request | 1 | On Request | On Request | 1130 | On Request | On Request |
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This Integrated Device Technology 6116LA45DB is a 16Kbit SRAM memory integrated circuit. It utilizes an asynchronous SRAM technology with a parallel interface, offering an access time of 45 ns and a write cycle time of 45 ns. The device operates within a voltage range of 4.5V to 5.5V and is designed for a wide operating temperature range of -55°C to 125°C.
The memory is organized as 2K x 8, providing volatile storage. It is packaged in a 24-CDIP (0.600", 15.24mm) and features Through Hole mounting.
This component is suitable for applications requiring reliable volatile memory with specific voltage and temperature requirements. Its Through Hole package facilitates integration into various electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.24 | $1.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage range is 4.5V to 5.5V, with a nominal operating voltage of 5V.
It comes in a 24-CDIP package with a 0.600" (15.24mm) body width and through-hole mounting.
The operating temperature range is -55°C to 125°C (TA).
The memory size is 16Kbit, organized as 2K x 8.
The access time is 45ns.
The write cycle time is 45ns.
It uses a parallel memory interface.
