| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| Power Dissipation | |
| Storage Temperature |
The MAGNACHIP SEMICONDUCTOR 60R580P is a power MOSFET utilizing advanced super junction technology. This technology enables very low on-resistance and gate charge, contributing to high efficiency through optimized charge coupling.
Key electrical specifications include a 600V Drain-Source Breakdown Voltage (VDS) and a typical Gate Threshold Voltage (VGS(th)) of 3V. The Drain-Source On-State Resistance (RDS(ON)) is a maximum of 0.58 Ohms at a test condition of VGS = 10V and ID = 2.5A. It supports a continuous drain current (ID) of 8A at 25℃ and 5A at 100℃, with a pulsed drain current (IDM) of 24A.
This MOSFET is designed for applications such as PFC power supply stages, switching applications, adapters, motor control, and DC-DC converters. It features low power loss due to high-speed switching and low on-resistance, along with 100% avalanche tested for reliability. The device is packaged in a TO-251-VS package and is Halogen Free.
Thermal characteristics include a junction-case thermal resistance (Rthjc) of 1.8℃/W and a junction-ambient thermal resistance (Rthja) of 62.5℃/W. The maximum operating junction temperature (Tj) is 150℃.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Breakdown Voltage (VDS) is 600V.
The typical Gate Threshold Voltage (VGS(th)) is 3V.
The maximum Drain-Source On-State Resistance (RDS(ON)) is 0.58 Ohms.
The continuous drain current (ID) is rated at 8A at 25°C.
The 60R580P is supplied in a TO-251-VS package.
Yes, the 60R580P is Halogen Free.