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350 pcs
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350 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon 60R360P7 is a 600V CoolMOS P7 series power transistor designed for high-voltage applications. This MOSFET utilizes superjunction technology to combine fast switching speeds with excellent ease of use, including low ringing tendency and robust body diode performance.
Key electrical specifications include a maximum drain-source breakdown voltage of 650V and a maximum on-resistance of 360mΩ. The typical gate charge is 13nC, contributing to efficient switching. The transistor is suitable for hard and soft switching applications such as PFC and LLC stages.
Packaged in a TO-220FP-3 through-hole configuration, the 60R360P7 is designed for applications requiring efficient power conversion. Its features include reduced switching and conduction losses, leading to more compact and cooler designs. The device is fully qualified according to JEDEC for industrial applications.
| Qty | Low | High |
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| 1+ | $0.10 | $0.10 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage (Vds) at Tj,max is 650V.
The maximum on-resistance (Rds(on)) is 360 mΩ.
The typical gate charge (Qg) is 13 nC.
The 60R360P7 is supplied in a TO-220FP-3 package.
The standard package quantity is 500 units.